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09:00~09:30 | °³ ȸ |
09:30~10:30 ³²È£Çö ¹Ú»ç (¼¿ï´ë) | Lattice instability as a cause of the long-time instability in amorphous oxide semiconductors | ∙ Microscopic origin of NBIS and IS in a-IGZO ∙ A design direction toward stress-free a-IGZO |
10:30~11:30 ±èÇö¼® ¹Ú»ç (»ï¼ºÁ¾±â¿ø) | High Mobility Thin Film Transistors based on Zinc Oxynitride Semiconductors | ∙ Oxide TFTs for display applications ∙ Approach scheme for high stability |
11:30~12:30 Á¤ÇöÁ¾ ±³¼ö (°Ç±¹´ë) | Graphene Devices: from Transistors to Barristors | ∙ Mechanism of carrier transport ∙ How to turn off the device w/o bandgap? (Barristors) |
12:30~14:00 | Á¡ ½É |
14:00-15:00 °íÇöÇù ±³¼ö (UNIST) | Nanostructured semiconductors for sensors and electronics | ∙ III-V nanomembrane electronics ∙ Multifunctional flexible electronics |
15:00~16:00 ¹Ú¼º±Ô ±³¼ö (Áß¾Ó´ë) | High performance Solution-processed Metal-Oxide Thin-Film-Devices for Large Area Flexible Electronics | ∙ High performance Oxide TFTs with H.T. Process ∙ Flexible Oxide TFTs with L.T. Process |
16:00~17:00 ÃÖ¿õ ±³¼ö (±¹¹Î´ë) | Thin-Film Transistors Based on MoS2 Semiconductors | ∙ Materials properties of 2D MoS2 ∙ Transistor applications of 2D MoS2 |
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